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PSMN013-100PS from NXP/PH,NXP Semiconductors

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PSMN013-100PS

Manufacturer: NXP/PH, NXP

N-channel 100V 13.9m鈩?standard level MOSFET in TO220.

Partnumber Manufacturer Quantity Availability
PSMN013-100PS,PSMN013100PS NXP/PH, NXP 10800 In Stock

Description and Introduction

N-channel 100V 13.9m鈩?standard level MOSFET in TO220. The **PSMN013-100PS** is a high-performance N-channel MOSFET designed for power management applications requiring low on-resistance and high efficiency. This electronic component is widely used in switching regulators, motor control circuits, and power supply systems due to its robust performance and reliability.  

With a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) of up to 130A, the PSMN013-100PS offers excellent power handling capabilities. Its low on-resistance (RDS(on)) of just 1.3mΩ minimizes conduction losses, enhancing energy efficiency in high-current applications.  

The MOSFET features a compact and thermally efficient Power-SO8 package, making it suitable for space-constrained designs while ensuring effective heat dissipation. Additionally, its fast switching characteristics contribute to reduced switching losses, further improving system performance.  

Engineers often select the PSMN013-100PS for its balance of power density, thermal management, and cost-effectiveness. Whether used in industrial automation, automotive systems, or renewable energy solutions, this component provides a dependable solution for demanding power electronics applications.  

For optimal performance, proper gate drive circuitry and thermal management should be considered during design implementation.

Application Scenarios & Design Considerations

N-channel 100V 13.9m鈩?standard level MOSFET in TO220.

Alternative Part Number

  • IRFB4110PBF --: 100V N-channel MOSFET with low RDS(on) and high current capability, a well-established drop-in class replacement for 100V power MOSFET applications.
  • STP100N10F7 --: 100V N-channel power MOSFET in TO-220 with comparable voltage rating and low on-resistance, suitable for switching and power conversion designs.
  • FDP047AN08A0 --: High-current N-channel MOSFET with similar voltage class and low RDS(on), usable as an alternative in power switching circuits with layout verification.
  • IPP100N10N3G --: 100V N-channel MOSFET in TO-220 with comparable low RDS(on) and current rating, a well-established drop-in class replacement for the PSMN013-100PS.
  • STP100N10F7 --: 100V N-channel power MOSFET with similar on-resistance and current capability, suitable for switching and power conversion applications.
  • IRFB4110 --: 100V N-channel MOSFET in TO-220 with low RDS(on) and high current rating, widely used as an alternative in similar power switching designs.

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