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PSMN013-100PS from NXP/PH,NXP Semiconductors

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46.875ms

PSMN013-100PS

Manufacturer: NXP/PH

N-channel 100V 13.9m鈩?standard level MOSFET in TO220.

Partnumber Manufacturer Quantity Availability
PSMN013-100PS,PSMN013100PS NXP/PH 10000 In Stock

Description and Introduction

N-channel 100V 13.9m鈩?standard level MOSFET in TO220. **Introduction to the PSMN013-100PS Power MOSFET**  

The PSMN013-100PS is a high-performance N-channel power MOSFET designed for efficient power management in a variety of electronic applications. With a low on-resistance (RDS(on)) of just 1.3 mΩ, this component minimizes power losses, making it ideal for high-current switching applications such as DC-DC converters, motor control, and power supplies.  

Featuring a robust 100V drain-source voltage rating, the PSMN013-100PS ensures reliable operation in demanding environments. Its advanced trench technology enhances switching performance while maintaining thermal stability, crucial for applications requiring prolonged high-power operation.  

The MOSFET is housed in a compact and thermally efficient Power-SO8 package, allowing for space-saving PCB designs without compromising heat dissipation. Additionally, its fast switching characteristics contribute to improved system efficiency, reducing energy consumption in power-sensitive applications.  

Engineers and designers will appreciate the PSMN013-100PS for its balance of performance, durability, and cost-effectiveness. Whether used in industrial automation, automotive systems, or renewable energy solutions, this MOSFET delivers consistent and efficient power handling, making it a versatile choice for modern electronic designs.

Partnumber Manufacturer Quantity Availability
PSMN013-100PS,PSMN013100PS NXP 800 In Stock

Description and Introduction

N-channel 100V 13.9m鈩?standard level MOSFET in TO220. The **PSMN013-100PS** is a high-performance N-channel MOSFET designed for power management applications requiring low on-resistance and high efficiency. This electronic component is widely used in switching regulators, motor control circuits, and power supply systems due to its robust performance and reliability.  

With a drain-source voltage (VDS) rating of 100V and a continuous drain current (ID) of up to 130A, the PSMN013-100PS offers excellent power handling capabilities. Its low on-resistance (RDS(on)) of just 1.3mΩ minimizes conduction losses, enhancing energy efficiency in high-current applications.  

The MOSFET features a compact and thermally efficient Power-SO8 package, making it suitable for space-constrained designs while ensuring effective heat dissipation. Additionally, its fast switching characteristics contribute to reduced switching losses, further improving system performance.  

Engineers often select the PSMN013-100PS for its balance of power density, thermal management, and cost-effectiveness. Whether used in industrial automation, automotive systems, or renewable energy solutions, this component provides a dependable solution for demanding power electronics applications.  

For optimal performance, proper gate drive circuitry and thermal management should be considered during design implementation.

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