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PSMN008-75B from PHILIPS

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PSMN008-75B

Manufacturer: PHILIPS, NXP, NXP/PH

N-channel enhancement mode field-effect transistor
Partnumber Manufacturer Quantity Availability
PSMN008-75B,PSMN00875B PHILIPS, NXP, NXP/PH 16296 In Stock

Description and Introduction

N-channel enhancement mode field-effect transistor # Introduction to the PSMN008-75B Power MOSFET  

The PSMN008-75B is a high-performance N-channel power MOSFET designed for efficient power switching applications. With a low on-resistance (RDS(on)) of just 0.75 mΩ, this component minimizes conduction losses, making it ideal for high-current applications such as DC-DC converters, motor drives, and power management systems.  

Featuring a robust 75V drain-source voltage rating, the PSMN008-75B ensures reliable operation in demanding environments. Its advanced trench technology enhances switching performance while maintaining thermal stability, reducing the risk of overheating in high-power circuits.  

The MOSFET is housed in a compact, industry-standard D2PAK (TO-263) package, offering excellent thermal dissipation and mechanical durability. Its fast switching characteristics and low gate charge contribute to improved efficiency in high-frequency applications.  

Engineers favor the PSMN008-75B for its balance of performance, reliability, and cost-effectiveness. Whether used in industrial automation, renewable energy systems, or automotive electronics, this MOSFET delivers consistent power handling with minimal energy loss.  

For designers seeking a dependable power switching solution, the PSMN008-75B provides a strong combination of low resistance, high voltage tolerance, and thermal efficiency.

Application Scenarios & Design Considerations

N-channel enhancement mode field-effect transistor

Alternative Part Number

  • IRFB4110PBF --: 100V N-channel MOSFET with very low RDS(on) and high current capability, suitable replacement for 75V power switching applications.
  • STP75NF75 --: 75V N-channel MOSFET in TO-220 with comparable current rating and low on-resistance, direct functional equivalent.
  • FDP047AN08A0 --: 80V N-channel MOSFET with low RDS(on) and high current rating, close electrical match for the original 75V device.
  • IRFB4110PBF --: 100V N-channel MOSFET with very low RDS(on) (~4.5 mOhm) in TO-220, a strong drop-in upgrade for 75V-class switching applications.
  • STP75NF75 --: 75V N-channel MOSFET in TO-220 with comparable current rating and low on-resistance, directly matching the original voltage class.
  • FDP047AN08A0 --: 80V N-channel MOSFET in TO-220 with low RDS(on) and high current capability, suitable as a close functional substitute.
  • IRF3205 --: Widely available N-channel MOSFET with comparable voltage and current ratings, suitable for similar switching and power applications.
  • STP75NF75 --: 75V N-channel power MOSFET with low on-resistance, a common drop-in alternative for 75V class switching designs.
  • FDP047AN08A0 --: High-current N-channel MOSFET with low RDS(on) and 75V-class rating, suitable for power switching replacements.

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