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PHD50N03LT from PHILIPS

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PHD50N03LT

Manufacturer: PHILIPS

N-channel TrenchMOS transistor Logic level FET

Partnumber Manufacturer Quantity Availability
PHD50N03LT PHILIPS 2500 In Stock

Description and Introduction

N-channel TrenchMOS transistor Logic level FET **Introduction to the PHD50N03LT Electronic Component**  

The PHD50N03LT is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. With a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) of 50A, this component is well-suited for switching and amplification tasks in power supplies, motor control, and DC-DC converters.  

Featuring low on-resistance (RDS(on)) and fast switching characteristics, the PHD50N03LT minimizes power losses, enhancing overall system efficiency. Its compact TO-252 (DPAK) package ensures reliable thermal performance while maintaining a small footprint on PCBs.  

The MOSFET is designed with robust gate drive compatibility, making it easy to integrate into both low-voltage and high-current circuits. Additionally, its built-in protection against overcurrent and thermal stress contributes to improved durability in demanding environments.  

Engineers and designers often select the PHD50N03LT for its balance of performance, cost-effectiveness, and reliability. Whether used in industrial automation, automotive systems, or consumer electronics, this component provides a dependable solution for modern power management challenges.  

For detailed specifications and application guidelines, referring to the manufacturer’s datasheet is recommended.

Application Scenarios & Design Considerations

N-channel TrenchMOS transistor Logic level FET
Partnumber Manufacturer Quantity Availability
PHD50N03LT PHI 495 In Stock

Description and Introduction

N-channel TrenchMOS transistor Logic level FET **Introduction to the PHD50N03LT MOSFET**  

The PHD50N03LT is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. With a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) of 50A, this component is well-suited for switching and amplification tasks in power supplies, motor control, and DC-DC converters.  

Featuring a low on-resistance (RDS(on)) of just 8.5mΩ at 10V gate drive, the PHD50N03LT minimizes power losses, enhancing energy efficiency in high-current circuits. Its fast switching characteristics make it ideal for high-frequency operations, while the robust thermal performance ensures reliable operation under demanding conditions.  

The MOSFET is housed in a TO-252 (DPAK) package, offering a compact footprint and excellent thermal dissipation. Additionally, its logic-level gate drive compatibility simplifies integration with low-voltage control circuits.  

Engineers and designers can leverage the PHD50N03LT for applications requiring high current handling, low conduction losses, and reliable thermal management, making it a versatile choice for modern power electronics.

Application Scenarios & Design Considerations

N-channel TrenchMOS transistor Logic level FET

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