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PHB95N03LTA from PHI,Philips

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PHB95N03LTA

Manufacturer: PHI

TrenchMOS (TM) logic level FET

Partnumber Manufacturer Quantity Availability
PHB95N03LTA PHI 350 In Stock

Description and Introduction

TrenchMOS (TM) logic level FET **Introduction to the PHB95N03LTA Electronic Component**  

The PHB95N03LTA is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. With a low on-resistance (RDS(on)) and a robust current-handling capability, this component is well-suited for switching and amplification tasks in power supplies, motor control, and battery management systems.  

Featuring a compact and thermally efficient package, the PHB95N03LTA ensures reliable operation under demanding conditions while minimizing power losses. Its fast switching characteristics make it ideal for high-frequency applications, contributing to improved energy efficiency in modern circuits.  

Key specifications include a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) of up to 95A, making it a versatile choice for both industrial and consumer electronics. Additionally, its low gate charge enhances performance in high-speed switching scenarios.  

Engineers and designers often select the PHB95N03LTA for its balance of performance, durability, and cost-effectiveness. Whether used in DC-DC converters, load switches, or other power-intensive applications, this MOSFET delivers consistent and dependable operation.  

For detailed technical parameters and application guidelines, referring to the manufacturer’s datasheet is recommended to ensure optimal integration into circuit designs.

Application Scenarios & Design Considerations

TrenchMOS (TM) logic level FET

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