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PBSS5130T from NXP,NXP Semiconductors

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PBSS5130T

Manufacturer: NXP

30 V; 1 A PNP low VCEsat (BISS) transistor

Partnumber Manufacturer Quantity Availability
PBSS5130T NXP 1000 In Stock

Description and Introduction

30 V; 1 A PNP low VCEsat (BISS) transistor **Introduction to the PBSS5130T Transistor by NXP Semiconductors**  

The **PBSS5130T** is a high-performance, low-voltage PNP transistor designed by NXP Semiconductors for switching and amplification applications. This surface-mount device (SMD) is part of NXP's portfolio of small-signal transistors, offering reliable performance in a compact **SOT-23** package.  

With a **collector-emitter voltage (VCE)** of -30 V and a **continuous collector current (IC)** of -1 A, the PBSS5130T is well-suited for low-power circuits in consumer electronics, industrial controls, and automotive systems. Its low saturation voltage and high current gain enhance efficiency in switching applications.  

The transistor features a **fast switching speed**, making it ideal for high-frequency operations. Additionally, its **Pb-free and halogen-free** construction aligns with modern environmental standards.  

Engineers favor the PBSS5130T for its **thermal stability**, robustness, and compatibility with automated PCB assembly processes. Whether used in power management, signal amplification, or load switching, this transistor provides a dependable solution for modern electronic designs.  

For detailed specifications, consult the official datasheet to ensure proper integration into your circuit design.

Application Scenarios & Design Considerations

30 V; 1 A PNP low VCEsat (BISS) transistor

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