PBSS4160DPNManufacturer: PHILIPS, NXP 60 V, 1 A NPN/PNP low VCEsat (BISS) transistor |
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| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| PBSS4160DPN | PHILIPS, NXP | 465000 | In Stock |
Description and Introduction
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor The **PBSS4160DPN** from NXP Semiconductors is a high-performance, low-voltage NPN/PNP transistor pair designed for efficient switching and amplification applications. Housed in a compact **DPN (Dual Flat No-Lead) package**, this component is optimized for space-constrained designs while delivering reliable operation in low-power circuits.  
Featuring a **40V collector-emitter voltage (VCE)** and a **1A continuous collector current (IC)**, the PBSS4160DPN is well-suited for signal processing, power management, and load switching in portable electronics, IoT devices, and automotive systems. Its **low saturation voltage** ensures minimal power loss, enhancing energy efficiency in battery-operated applications.   The transistor pair is designed with **matched NPN and PNP transistors**, providing balanced performance in push-pull configurations and complementary circuits. Additionally, its **high current gain (hFE)** and fast switching characteristics make it ideal for high-frequency applications.   With **RoHS compliance** and robust thermal performance, the PBSS4160DPN meets stringent industry standards, ensuring reliability in demanding environments. Its small footprint and dual-transistor integration simplify PCB layout, reducing component count and assembly complexity.   Engineers seeking a compact, efficient, and versatile transistor solution will find the PBSS4160DPN a valuable addition to their designs. |
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Application Scenarios & Design Considerations
60 V, 1 A NPN/PNP low VCEsat (BISS) transistor
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