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PBSS4140V from PHILIPS

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PBSS4140V

Manufacturer: PHILIPS

40 V low VCEsat NPN transistor

Partnumber Manufacturer Quantity Availability
PBSS4140V PHILIPS 3202 In Stock

Description and Introduction

40 V low VCEsat NPN transistor **Introduction to the PBSS4140V Transistor by Philips**  

The PBSS4140V is a high-performance NPN bipolar junction transistor (BJT) designed by Philips, now part of Nexperia. This surface-mount device is optimized for switching and amplification applications, offering low saturation voltage and high current gain. With a compact SOT89 package, it is well-suited for space-constrained designs in consumer electronics, industrial controls, and automotive systems.  

Key features of the PBSS4140V include a collector current rating of 4 A, a collector-emitter voltage (V_CEO) of 40 V, and a power dissipation of 1.5 W. Its high current capability and efficient thermal performance make it ideal for power management circuits, motor drivers, and LED lighting controls. The transistor also exhibits fast switching speeds, enhancing its suitability for high-frequency applications.  

Engineers value the PBSS4140V for its reliability, robust construction, and compatibility with automated assembly processes. Its electrical characteristics ensure stable operation under varying load conditions, making it a versatile choice for modern electronic designs. Whether used in linear or switching configurations, this transistor delivers consistent performance, meeting the demands of today's energy-efficient and compact electronic systems.

Application Scenarios & Design Considerations

40 V low VCEsat NPN transistor

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