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NDF04N60ZH from ON,ON Semiconductor

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15.625ms

NDF04N60ZH

Manufacturer: ON

N-Channel Power MOSFET 600 V, 2.0 Ohm

Partnumber Manufacturer Quantity Availability
NDF04N60ZH ON 10000 In Stock

Description and Introduction

N-Channel Power MOSFET 600 V, 2.0 Ohm **Introduction to the NDF04N60ZH Power MOSFET**  

The NDF04N60ZH is a high-performance N-channel power MOSFET designed for efficient switching applications in power electronics. With a drain-source voltage (VDS) rating of 600V and a continuous drain current (ID) of 4A, this component is well-suited for use in power supplies, inverters, motor control circuits, and other high-voltage systems.  

Featuring low on-resistance (RDS(on)) and fast switching characteristics, the NDF04N60ZH minimizes power dissipation, improving overall system efficiency. Its robust construction ensures reliable operation under demanding conditions, making it a preferred choice for industrial and automotive applications.  

The MOSFET incorporates advanced trench technology, which enhances its thermal performance and reduces conduction losses. Additionally, its high avalanche energy capability provides added durability against voltage spikes and transient events.  

Packaged in a TO-252 (DPAK) form factor, the NDF04N60ZH offers a compact footprint while maintaining excellent thermal dissipation properties. Engineers and designers can leverage its performance to optimize power conversion systems while maintaining cost-effectiveness.  

Overall, the NDF04N60ZH is a versatile and dependable solution for high-voltage switching applications, balancing efficiency, durability, and ease of integration.

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