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NTD6416ANL-1G from ON,ON Semiconductor

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NTD6416ANL-1G

Manufacturer: ON

N-Channel Power MOSFET 100 V, 19 A, 74 mΩ

Partnumber Manufacturer Quantity Availability
NTD6416ANL-1G,NTD6416ANL1G ON 10000 In Stock

Description and Introduction

N-Channel Power MOSFET 100 V, 19 A, 74 mΩ The **NTD6416ANL-1G** is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. This component is engineered to deliver low on-resistance and fast switching speeds, making it ideal for use in power supplies, motor control circuits, and DC-DC converters.  

With a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of up to 30A, the NTD6416ANL-1G ensures reliable operation under demanding conditions. Its low gate charge and optimized thermal performance contribute to reduced power losses, enhancing overall system efficiency.  

The MOSFET features a compact and robust TO-252 (DPAK) package, which provides excellent thermal dissipation while maintaining a small footprint on PCBs. Its lead-free and RoHS-compliant construction aligns with modern environmental standards, making it suitable for eco-conscious designs.  

Engineers and designers will appreciate the NTD6416ANL-1G for its balance of performance, durability, and cost-effectiveness. Whether used in industrial automation, consumer electronics, or automotive systems, this MOSFET offers a dependable solution for high-efficiency power switching applications.

Application Scenarios & Design Considerations

N-Channel Power MOSFET 100 V, 19 A, 74 mΩ

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