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NTB65N02RT4G from ON,ON Semiconductor

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NTB65N02RT4G

Manufacturer: ON

Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK

Partnumber Manufacturer Quantity Availability
NTB65N02RT4G ON 17400 In Stock

Description and Introduction

Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK # Introduction to the NTB65N02RT4G MOSFET  

The **NTB65N02RT4G** is an N-channel power MOSFET designed for high-efficiency switching applications. With a **30V drain-source voltage (VDS)** rating and a **continuous drain current (ID)** of up to **65A**, this component is well-suited for power management in automotive, industrial, and consumer electronics.  

Featuring a low **on-resistance (RDS(on))** of just **2.1mΩ** at 10V gate drive, the NTB65N02RT4G minimizes conduction losses, improving overall system efficiency. Its robust construction ensures reliable performance in demanding environments, making it ideal for applications such as DC-DC converters, motor control, and load switching.  

The MOSFET is housed in a **TO-263 (D2PAK)** package, providing excellent thermal dissipation and mechanical stability. Additionally, it incorporates **avalanche energy (EAS)** and **repetitive avalanche (EAR)** ratings, enhancing durability in transient voltage conditions.  

Designed with modern power requirements in mind, the NTB65N02RT4G combines high current handling, low resistance, and thermal efficiency, making it a versatile choice for engineers seeking reliable power switching solutions.

Application Scenarios & Design Considerations

Power MOSFET 65 A, 24 V N-Channel TO-220, D2PAK

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