NAND512R3A2CZA6EManufacturer: ST,ST, STM 128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories |
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| Partnumber | Manufacturer | Quantity | Availability |
|---|---|---|---|
| NAND512R3A2CZA6E | ST,ST, STM | 41500 | In Stock |
Description and Introduction
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories # Introduction to the NAND512R3A2CZA6E  
The **NAND512R3A2CZA6E** is a high-performance NAND flash memory component designed for applications requiring reliable, high-density data storage. With a capacity of 512Mb (64MB), this device is well-suited for embedded systems, industrial automation, and consumer electronics where fast read/write operations and endurance are critical.   Built with advanced NAND technology, the **NAND512R3A2CZA6E** offers efficient data management, supporting page-based access and block erase functionality. Its architecture ensures low power consumption while maintaining robust performance, making it ideal for battery-powered and energy-sensitive applications.   Key features include a standard **TSOP-48** package, ensuring compatibility with existing designs, and support for **SLC (Single-Level Cell)** technology, which enhances durability and data retention compared to multi-level cell alternatives. The device operates within a wide voltage range, providing flexibility across different system requirements.   Engineers and developers can leverage this component for firmware storage, boot code, or general-purpose data logging. Its reliability and industry-standard interface simplify integration, reducing development time while ensuring long-term stability in demanding environments.   The **NAND512R3A2CZA6E** represents a dependable solution for applications where consistent performance and data integrity are paramount. |
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Application Scenarios & Design Considerations
128 Mbit, 256 Mbit, 512 Mbit, 1 Gbit (x8/x16) 528 Byte/264 Word Page, 1.8V/3V, NAND Flash Memories
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