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NP82N04NUG from NEC

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NP82N04NUG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP82N04NUG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR **Introduction to the NP82N04NUG MOSFET**  

The NP82N04NUG is an N-channel power MOSFET designed for high-efficiency switching applications. With a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of up to 82A, this component is well-suited for power management in automotive, industrial, and consumer electronics.  

Featuring a low on-resistance (RDS(on)) of just 2.2mΩ, the NP82N04NUG minimizes conduction losses, improving overall system efficiency. Its robust design ensures reliable performance in demanding environments, making it ideal for motor control, DC-DC converters, and battery protection circuits.  

The MOSFET is housed in a TO-263 (D2PAK) package, providing excellent thermal dissipation and mechanical stability. Additionally, its fast switching characteristics and low gate charge (Qg) enhance performance in high-frequency applications.  

Engineers favor the NP82N04NUG for its balance of power handling, thermal efficiency, and compact form factor. Whether used in power supplies or load-switching systems, this MOSFET delivers dependable operation while optimizing energy usage.  

For detailed specifications, always refer to the manufacturer’s datasheet to ensure proper integration into your design.

Application Scenarios & Design Considerations

MOS FIELD EFFECT TRANSISTOR

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