IC Phoenix logo

Home ›  N  › N19 > NP82N04NUG

NP82N04NUG from NEC

Fast Delivery, Competitive Price @IC-phoenix

If you need more electronic components or better pricing, we welcome any inquiry.

15.625ms

NP82N04NUG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP82N04NUG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR **Introduction to the NP82N04NUG MOSFET**  

The NP82N04NUG is an N-channel power MOSFET designed for high-efficiency switching applications. With a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of up to 82A, this component is well-suited for power management in automotive, industrial, and consumer electronics.  

Featuring a low on-resistance (RDS(on)) of just 2.2mΩ, the NP82N04NUG minimizes conduction losses, improving overall system efficiency. Its robust design ensures reliable performance in demanding environments, making it ideal for motor control, DC-DC converters, and battery protection circuits.  

The MOSFET is housed in a TO-263 (D2PAK) package, providing excellent thermal dissipation and mechanical stability. Additionally, its fast switching characteristics and low gate charge (Qg) enhance performance in high-frequency applications.  

Engineers favor the NP82N04NUG for its balance of power handling, thermal efficiency, and compact form factor. Whether used in power supplies or load-switching systems, this MOSFET delivers dependable operation while optimizing energy usage.  

For detailed specifications, always refer to the manufacturer’s datasheet to ensure proper integration into your design.

Request Quotation

For immediate assistance, call us at +86 533 2716050 or email [email protected]

Part Number Quantity Target Price($USD) Email Contact Person
We offer highly competitive channel pricing. Get in touch for details.

Specializes in hard-to-find components chips