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NP82N04NDG from NEC

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NP82N04NDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP82N04NDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR **Introduction to the NP82N04NDG Electronic Component**  

The NP82N04NDG is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. Known for its low on-resistance and high current-handling capabilities, this component is widely used in power supplies, motor control circuits, and DC-DC converters.  

With a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of up to 82A, the NP82N04NDG ensures reliable operation under demanding conditions. Its low gate charge and fast switching characteristics make it suitable for high-frequency applications, minimizing power losses and improving overall system efficiency.  

The MOSFET features a compact and robust package, ensuring thermal stability and durability in harsh environments. Its advanced design also includes built-in protection against electrostatic discharge (ESD), enhancing reliability in sensitive circuits.  

Engineers and designers often choose the NP82N04NDG for its balance of performance, efficiency, and cost-effectiveness. Whether used in industrial automation, automotive systems, or consumer electronics, this component provides a dependable solution for power switching and amplification needs.  

By integrating the NP82N04NDG into circuit designs, professionals can achieve enhanced power efficiency and system longevity, making it a preferred choice in modern electronic applications.

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