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NP82N04MDG from NEC

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NP82N04MDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP82N04MDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR **Introduction to the NP82N04MDG Electronic Component**  

The NP82N04MDG is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. Known for its low on-resistance and high current-handling capability, this component is widely used in power supplies, motor control systems, and DC-DC converters.  

With a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of up to 82A, the NP82N04MDG ensures reliable operation under demanding conditions. Its advanced design minimizes power losses, making it suitable for energy-efficient solutions. The MOSFET also features a compact and robust package, enhancing thermal performance and durability in high-power environments.  

Key characteristics include fast switching speeds, low gate charge, and excellent thermal stability, which contribute to improved system efficiency and reduced heat dissipation. Engineers often select this component for its balance of performance, reliability, and cost-effectiveness in industrial, automotive, and consumer electronics applications.  

For optimal performance, proper circuit design and thermal management are essential. The NP82N04MDG datasheet provides detailed specifications, including safe operating area (SOA) and thermal resistance values, to assist in system integration.

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