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NP80N06NLG from NEC

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NP80N06NLG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP80N06NLG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR **Introduction to the NP80N06NLG MOSFET**  

The NP80N06NLG is an N-channel power MOSFET designed for high-efficiency switching applications. With a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of 80A, this component is well-suited for power management in industrial, automotive, and consumer electronics.  

Featuring low on-resistance (RDS(on)) and fast switching characteristics, the NP80N06NLG minimizes power losses, making it ideal for DC-DC converters, motor drivers, and load-switching circuits. Its robust construction ensures reliable performance under demanding conditions, while the TO-263 (D2PAK) package provides efficient thermal dissipation.  

Key specifications include a gate threshold voltage (VGS(th)) typically around 2V to 4V, ensuring compatibility with standard logic-level drivers. Additionally, its avalanche energy rating enhances durability in transient voltage scenarios.  

Engineers value the NP80N06NLG for its balance of performance, efficiency, and cost-effectiveness, making it a practical choice for modern power electronics designs. Whether used in battery management systems or high-current switching applications, this MOSFET delivers dependable operation with minimal energy waste.  

For detailed electrical and thermal parameters, consult the manufacturer’s datasheet to ensure proper integration into your circuit design.

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