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NP80N055PDG from NEC

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NP80N055PDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP80N055PDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR # Introduction to the NP80N055PDG Electronic Component  

The NP80N055PDG is a high-performance power MOSFET designed for efficient power management in various electronic applications. This N-channel device features a low on-resistance (RDS(on)) and high current handling capability, making it suitable for switching and amplification tasks in power supplies, motor control, and other high-efficiency systems.  

With a drain-source voltage (VDS) rating of 55V and a continuous drain current (ID) of up to 80A, the NP80N055PDG offers robust performance in demanding environments. Its advanced design ensures minimal power loss, contributing to improved thermal management and energy efficiency.  

The MOSFET integrates fast switching characteristics, reducing switching losses in high-frequency applications. Additionally, its compact package enhances thermal dissipation while maintaining a small footprint on PCBs. Engineers and designers favor this component for its reliability, durability, and ability to operate under high-stress conditions.  

Whether used in industrial automation, automotive electronics, or renewable energy systems, the NP80N055PDG provides a dependable solution for power control needs. Its combination of high efficiency, thermal stability, and rugged construction makes it a preferred choice for modern power electronics.

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