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NP80N055NDG from NEC

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NP80N055NDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP80N055NDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR # Introduction to the NP80N055NDG Electronic Component  

The NP80N055NDG is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With its advanced semiconductor technology, this component offers low on-resistance and high switching speeds, making it suitable for power conversion, motor control, and load switching circuits.  

Key features of the NP80N055NDG include a drain-source voltage (VDS) rating of 55V and a continuous drain current (ID) of up to 80A, ensuring robust performance in demanding environments. Its low gate charge and reduced conduction losses contribute to improved energy efficiency, which is critical in modern power electronics.  

The component is housed in a compact and thermally efficient package, facilitating effective heat dissipation and reliable operation under high-power conditions. Engineers and designers often select the NP80N055NDG for applications requiring high current handling and fast switching, such as DC-DC converters, battery management systems, and industrial automation.  

By balancing performance, efficiency, and durability, the NP80N055NDG serves as a dependable solution for optimizing power delivery in next-generation electronic designs.

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