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NP80N055MHE from NEC

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15.625ms

NP80N055MHE

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

Partnumber Manufacturer Quantity Availability
NP80N055MHE NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET **Introduction to the NP80N055MHE Power MOSFET**  

The NP80N055MHE is a high-performance N-channel power MOSFET designed for efficient power management in a variety of electronic applications. With a drain-source voltage (VDS) rating of 55V and a continuous drain current (ID) of 80A, this component is well-suited for demanding power switching tasks in industrial, automotive, and consumer electronics.  

Featuring low on-resistance (RDS(on)) and high-speed switching capabilities, the NP80N055MHE minimizes power losses, enhancing energy efficiency in circuits such as motor drives, DC-DC converters, and battery management systems. Its robust design ensures reliable operation under high-current conditions while maintaining thermal stability.  

The MOSFET is housed in a TO-263 (D2PAK) package, providing excellent thermal performance and mechanical durability. This makes it suitable for applications requiring efficient heat dissipation and compact board space utilization. Additionally, its advanced gate structure allows for precise control, reducing switching losses and improving overall system performance.  

Engineers and designers can leverage the NP80N055MHE for its balance of power handling, efficiency, and reliability, making it a versatile choice for modern power electronics. Its specifications align with industry standards, ensuring compatibility with a wide range of circuit designs.

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