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NP80N055MDG from NEC

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NP80N055MDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP80N055MDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR The **NP80N055MDG** is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. With a robust **80V drain-source voltage (VDS)** rating and a **continuous drain current (ID)** of up to **55A**, this component is well-suited for demanding power switching tasks in industrial, automotive, and consumer electronics.  

Featuring a low **on-resistance (RDS(on))** of just **8.5mΩ**, the NP80N055MDG minimizes power losses, enhancing energy efficiency in circuits. Its advanced design ensures fast switching speeds, making it ideal for high-frequency applications such as DC-DC converters, motor drives, and power supplies.  

The MOSFET is housed in a **TO-252 (DPAK)** package, providing a compact footprint while maintaining excellent thermal performance. Its rugged construction ensures reliability under high-stress conditions, including elevated temperatures and voltage spikes.  

Engineers and designers will appreciate the NP80N055MDG for its balance of performance, durability, and cost-effectiveness. Whether used in battery management systems, load switches, or inverters, this MOSFET delivers consistent and efficient operation, making it a dependable choice for modern power electronics.

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