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NP80N04PDG from NEC

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NP80N04PDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP80N04PDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR # Introduction to the NP80N04PDG Electronic Component  

The **NP80N04PDG** is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. With a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of up to 80A, this component is well-suited for power switching, motor control, and DC-DC conversion circuits.  

Key features of the NP80N04PDG include a low on-resistance (RDS(on)), which minimizes power loss and enhances thermal performance. Its robust design ensures reliability in demanding environments, making it ideal for automotive, industrial, and consumer electronics applications.  

The MOSFET is housed in a TO-252 (DPAK) package, providing a compact footprint while maintaining excellent heat dissipation. Additionally, its fast switching characteristics contribute to improved efficiency in high-frequency applications.  

Engineers and designers often select the NP80N04PDG for its balance of performance, durability, and cost-effectiveness. Whether used in power supplies, battery management systems, or load switches, this component delivers consistent operation under varying electrical conditions.  

For detailed specifications, always refer to the manufacturer’s datasheet to ensure proper integration into circuit designs.

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