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NP80N04NLG from NEC

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NP80N04NLG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP80N04NLG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR # Introduction to the NP80N04NLG Electronic Component  

The NP80N04NLG is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. With a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) capability of 80A, this component is well-suited for power switching, motor control, and DC-DC conversion circuits.  

Featuring a low on-resistance (RDS(on)) of just 4.5mΩ (typical), the NP80N04NLG minimizes power losses, improving overall system efficiency. Its robust design ensures reliable operation under high-current conditions while maintaining thermal stability. The MOSFET also includes an integrated Schottky diode, enhancing its performance in inductive load applications.  

Packaged in a TO-263 (D2PAK) form factor, the NP80N04NLG offers excellent thermal dissipation, making it suitable for compact and high-power-density designs. Its lead-free and RoHS-compliant construction aligns with modern environmental standards.  

Engineers and designers often select the NP80N04NLG for its balance of performance, efficiency, and durability in demanding power electronics applications. Whether used in automotive systems, industrial equipment, or consumer electronics, this MOSFET provides a dependable solution for high-current switching needs.

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