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NP80N04NHE from NEC

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NP80N04NHE

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

Partnumber Manufacturer Quantity Availability
NP80N04NHE NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET **Introduction to the NP80N04NHE Electronic Component**  

The NP80N04NHE is a high-performance N-channel MOSFET designed for efficient power management in a variety of electronic applications. With a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of 80A, this component is well-suited for high-current switching tasks, including motor control, power supplies, and DC-DC converters.  

Featuring a low on-resistance (RDS(on)) of just 4.5mΩ at 10V gate drive, the NP80N04NHE minimizes power loss and enhances thermal performance. Its robust design ensures reliable operation under demanding conditions, making it ideal for industrial and automotive applications where durability is critical.  

The MOSFET is housed in a TO-263 (D2PAK) package, which provides excellent heat dissipation and mechanical stability. Additionally, its fast switching characteristics and low gate charge contribute to improved efficiency in high-frequency circuits.  

Engineers and designers seeking a dependable power MOSFET for high-current applications will find the NP80N04NHE to be a practical choice, balancing performance, efficiency, and thermal management in a compact form factor.

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