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NP80N04NDG from NEC

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15.137ms

NP80N04NDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP80N04NDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR # Introduction to the NP80N04NDG Electronic Component  

The NP80N04NDG is an N-channel MOSFET designed for high-efficiency power management applications. With a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of 80A, this component is well-suited for switching and amplification tasks in industrial, automotive, and consumer electronics.  

Featuring a low on-resistance (RDS(on)) of just a few milliohms, the NP80N04NDG minimizes power loss and improves thermal performance, making it ideal for high-current applications. Its robust construction ensures reliable operation under demanding conditions, while the fast switching capabilities enhance efficiency in DC-DC converters, motor drives, and battery management systems.  

The MOSFET is housed in a TO-252 (DPAK) package, offering a compact footprint and excellent thermal dissipation. Additionally, its gate charge and threshold voltage specifications are optimized for compatibility with modern control circuits, simplifying design integration.  

Engineers and designers often select the NP80N04NDG for its balance of performance, durability, and cost-effectiveness, making it a versatile choice for power electronics applications requiring high current handling and efficient switching.

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