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NP80N04MLG from NEC

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NP80N04MLG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP80N04MLG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR # Introduction to the NP80N04MLG Electronic Component  

The NP80N04MLG is a high-performance N-channel MOSFET designed for efficient power management in various electronic applications. With a drain-source voltage (VDS) rating of 40V and a continuous drain current (ID) of 80A, this component is well-suited for power switching, motor control, and DC-DC conversion circuits.  

Featuring low on-resistance (RDS(on)) and fast switching capabilities, the NP80N04MLG minimizes power losses, enhancing energy efficiency in high-current applications. Its robust construction ensures reliable operation under demanding conditions, making it a preferred choice for industrial, automotive, and consumer electronics.  

The MOSFET is housed in a compact, surface-mount package, facilitating easy integration into modern PCB designs while maintaining effective thermal performance. Additionally, its gate charge and threshold voltage specifications contribute to optimized control in high-frequency switching environments.  

Engineers and designers often select the NP80N04MLG for its balance of performance, durability, and cost-effectiveness. Whether used in power supplies, battery management systems, or load switches, this component delivers consistent performance, ensuring stable and efficient circuit operation.  

By leveraging its advanced semiconductor technology, the NP80N04MLG remains a versatile solution for power electronics applications requiring high current handling and low conduction losses.

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