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NP80N03NDE from NEC

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26.001ms

NP80N03NDE

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET

Partnumber Manufacturer Quantity Availability
NP80N03NDE NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR SWITCHING N-CHANNEL POWER MOS FET # Introduction to the NP80N03NDE Electronic Component  

The NP80N03NDE is an N-channel MOSFET designed for high-efficiency power management applications. With a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) of up to 80A, this component is well-suited for switching and amplification tasks in power supplies, motor control, and DC-DC converters.  

Featuring a low on-resistance (RDS(on)), the NP80N03NDE minimizes power loss and improves thermal performance, making it ideal for energy-sensitive designs. Its robust construction ensures reliable operation under demanding conditions, while the compact package enhances board space efficiency.  

Key specifications include a fast switching speed, which reduces transition losses in high-frequency applications, and a low gate charge, enabling efficient drive circuitry. The MOSFET also incorporates built-in protection features to enhance durability and safety.  

Engineers frequently select the NP80N03NDE for its balance of performance, efficiency, and cost-effectiveness. Whether used in industrial automation, automotive systems, or consumer electronics, this component provides a dependable solution for power control needs.  

For detailed application guidelines, always refer to the manufacturer's datasheet to ensure optimal performance and compatibility.

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