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NP50P06KDG from NEC

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NP50P06KDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP50P06KDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR # Introduction to the NP50P06KDG Power MOSFET  

The NP50P06KDG is a P-channel power MOSFET designed for high-efficiency switching applications. With a drain-source voltage (VDS) rating of -60V and a continuous drain current (ID) of -50A, this component is well-suited for power management in automotive, industrial, and consumer electronics.  

Featuring low on-resistance (RDS(on)) and high-speed switching capabilities, the NP50P06KDG minimizes power losses, improving system efficiency. Its robust construction ensures reliable performance in demanding environments, making it ideal for motor control, DC-DC converters, and load switching applications.  

The MOSFET is housed in a TO-252 (DPAK) package, offering a compact footprint while maintaining excellent thermal dissipation. Its gate charge (Qg) and threshold voltage (VGS(th)) are optimized for compatibility with modern control circuits, simplifying integration into existing designs.  

Engineers value the NP50P06KDG for its balance of performance, durability, and cost-effectiveness. Whether used in battery management systems or power supplies, this MOSFET provides dependable operation under high-current conditions, making it a versatile choice for various electronic applications.

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