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NP36P06KDG from NEC

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7.813ms

NP36P06KDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP36P06KDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR # Introduction to the NP36P06KDG Electronic Component  

The NP36P06KDG is a high-performance P-channel MOSFET designed for efficient power management in various electronic applications. With a drain-source voltage (VDS) rating of -60V and a continuous drain current (ID) of -36A, this component is well-suited for switching and amplification tasks in power supplies, motor control, and battery management systems.  

Featuring low on-resistance (RDS(on)) and fast switching characteristics, the NP36P06KDG minimizes power losses, enhancing energy efficiency in circuits. Its robust design ensures reliable operation under demanding conditions, making it a preferred choice for industrial and automotive applications.  

The MOSFET is housed in a TO-252 (DPAK) package, providing a compact footprint while maintaining excellent thermal performance. Its lead-free and RoHS-compliant construction aligns with modern environmental standards.  

Engineers and designers often select the NP36P06KDG for its balance of performance, durability, and cost-effectiveness. Whether used in DC-DC converters, load switches, or other power electronics, this component delivers consistent and efficient operation.  

For detailed specifications, always refer to the manufacturer’s datasheet to ensure compatibility with your design requirements.

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