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NP100P06PDG from NEC

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NP100P06PDG

Manufacturer: NEC

MOS FIELD EFFECT TRANSISTOR

Partnumber Manufacturer Quantity Availability
NP100P06PDG NEC 30000 In Stock

Description and Introduction

MOS FIELD EFFECT TRANSISTOR # Introduction to the NP100P06PDG Electronic Component  

The NP100P06PDG is a high-performance N-channel power MOSFET designed for efficient power management in a variety of electronic applications. With a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) of 100A, this component is well-suited for high-current switching tasks in power supplies, motor control systems, and DC-DC converters.  

Key features of the NP100P06PDG include a low on-resistance (RDS(on)), which minimizes power dissipation and enhances energy efficiency. Its robust design ensures reliable operation under demanding conditions, making it ideal for automotive, industrial, and consumer electronics applications.  

The MOSFET is housed in a TO-252 (DPAK) package, providing a compact footprint while maintaining excellent thermal performance. Its fast switching capabilities further contribute to improved system responsiveness and reduced switching losses.  

Engineers and designers favor the NP100P06PDG for its balance of performance, durability, and cost-effectiveness. Whether used in battery management systems, load switches, or power distribution circuits, this component delivers consistent and efficient power handling in a wide range of electronic designs.

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