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NN514256J-45 from NPNX

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NN514256J-45

Manufacturer: NPNX

CMOS 256K x 4bit Dynamic RAM

Partnumber Manufacturer Quantity Availability
NN514256J-45,NN514256J45 NPNX 200 In Stock

Description and Introduction

CMOS 256K x 4bit Dynamic RAM The **NN514256J-45** is a high-performance electronic component designed for applications requiring reliable memory storage and fast data access. This integrated circuit (IC) is part of the dynamic random-access memory (DRAM) family, offering a storage capacity of **256 megabits (32 megabytes)** with a **45-nanosecond access time**, making it suitable for systems where speed and efficiency are critical.  

Engineered for stability and low power consumption, the NN514256J-45 operates within standard voltage ranges, ensuring compatibility with a variety of computing and embedded systems. Its **JEDEC-compliant** design guarantees adherence to industry standards, providing seamless integration into existing hardware architectures.  

Common applications include **networking equipment, industrial automation, and legacy computing systems**, where dependable memory performance is essential. The component’s robust construction ensures durability in demanding environments, making it a preferred choice for engineers working on long-term deployment solutions.  

With its balanced combination of speed, capacity, and power efficiency, the NN514256J-45 remains a relevant solution for specialized memory requirements in both modern and legacy electronic designs. Its specifications cater to developers seeking a dependable DRAM module without compromising on performance.

Application Scenarios & Design Considerations

CMOS 256K x 4bit Dynamic RAM

Alternative Part Number

  • AS4C256K16F-45JC --: 256K x 16 fast asynchronous SRAM with 45 ns access time, pin-compatible with the original 256K x 16 SRAM and available as a direct replacement.
  • CY7C1041CV33-45ZXC --: 256K x 16 asynchronous SRAM with 45 ns speed grade, functionally equivalent and widely used as a drop-in substitute for this SRAM class.
  • IS61LV25616AL-45TLI --: 256K x 16 low-voltage asynchronous SRAM rated at 45 ns, matching density, organization and speed of the original part.

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