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NMC27C128BQM200 from NS,National Semiconductor

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NMC27C128BQM200

Manufacturer: NS

200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM

Partnumber Manufacturer Quantity Availability
NMC27C128BQM200 NS 3400 In Stock

Description and Introduction

200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM # Introduction to the NMC27C128BQM200  

The NMC27C128BQM200 is a high-performance EPROM (Erasable Programmable Read-Only Memory) component designed for reliable data storage in embedded systems and other electronic applications. With a storage capacity of 128 kilobits (16K x 8), this device provides non-volatile memory retention, ensuring data persistence even when power is removed.  

Featuring a fast access time of 200 ns, the NMC27C128BQM200 is well-suited for applications requiring quick read operations, such as firmware storage in industrial control systems, telecommunications equipment, and legacy computing devices. Its robust design supports a wide operating voltage range, enhancing compatibility with various circuit configurations.  

The EPROM is programmed using standard UV erasure methods, allowing for multiple reprogramming cycles, which makes it ideal for development and prototyping environments. The ceramic package ensures durability and thermal stability, making it suitable for demanding operational conditions.  

Engineers and designers value the NMC27C128BQM200 for its reliability, ease of integration, and long-term data retention capabilities. While newer flash memory technologies have largely replaced EPROMs in modern designs, this component remains a trusted solution for legacy systems and specialized applications requiring proven performance.

Application Scenarios & Design Considerations

200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM

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