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NMC27C128BQE200 from NS,National Semiconductor

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NMC27C128BQE200

Manufacturer: NS

200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM

Partnumber Manufacturer Quantity Availability
NMC27C128BQE200 NS 5380 In Stock

Description and Introduction

200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM # Introduction to the NMC27C128BQE200  

The **NMC27C128BQE200** is a high-performance **128Kbit (16K x 8) UV-erasable programmable read-only memory (EPROM)** designed for applications requiring non-volatile data storage. This component features a fast access time of **200ns**, making it suitable for embedded systems, industrial controls, and legacy computing applications where reliable firmware storage is essential.  

Built with **CMOS technology**, the NMC27C128BQE200 offers low power consumption while maintaining robust performance. Its **single 5V power supply** requirement simplifies integration into various circuit designs. The device supports **standard parallel interface programming**, ensuring compatibility with conventional EPROM programmers.  

A key feature of this EPROM is its **UV-erasability**, allowing users to reprogram the memory after exposure to ultraviolet light, making it ideal for development and prototyping phases. The **JEDEC-standard pinout** ensures drop-in compatibility with similar EPROMs, facilitating easy upgrades or replacements in existing systems.  

With a wide operating temperature range and durable construction, the NMC27C128BQE200 is well-suited for demanding environments. Its reliability and versatility make it a preferred choice for engineers working with legacy or specialized hardware requiring reprogrammable non-volatile memory solutions.

Application Scenarios & Design Considerations

200 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM

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