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NMC27C128BQE150 from NSC,National Semiconductor

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NMC27C128BQE150

Manufacturer: NSC

150 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM

Partnumber Manufacturer Quantity Availability
NMC27C128BQE150 NSC 4000 In Stock

Description and Introduction

150 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM # Introduction to the NMC27C128BQE150  

The NMC27C128BQE150 is a high-performance EPROM (Erasable Programmable Read-Only Memory) integrated circuit designed for applications requiring non-volatile data storage. With a capacity of 128 kilobits (16K x 8 bits), this component provides reliable and durable memory storage, making it suitable for embedded systems, industrial controls, and legacy computing applications.  

Featuring a fast access time of 150 ns, the NMC27C128BQE150 ensures efficient data retrieval, supporting real-time processing requirements. It operates on a single 5V power supply, aligning with standard TTL voltage levels for easy integration into existing circuit designs. The device is housed in a durable ceramic quad flat package (QFP), offering robustness in demanding environments.  

One of the key advantages of this EPROM is its erasability via ultraviolet (UV) light, allowing for reprogramming and reuse in development and prototyping phases. Once programmed, the memory retains data without power, ensuring long-term reliability.  

Engineers and designers value the NMC27C128BQE150 for its balance of speed, capacity, and durability, making it a trusted choice for applications where stable, non-volatile memory is essential.

Application Scenarios & Design Considerations

150 ns, Vcc=5V+/-10%, 131,072-bit (16k x 8) high speed version UV erasable CMOS PROM

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