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NM93C66N from NS,National Semiconductor

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NM93C66N

Manufacturer: NS

Electrically Erasable Programmable Memories

Partnumber Manufacturer Quantity Availability
NM93C66N NS 425 In Stock

Description and Introduction

Electrically Erasable Programmable Memories The **NM93C66N** is a serial Electrically Erasable Programmable Read-Only Memory (EEPROM) integrated circuit designed for non-volatile data storage in electronic systems. This component features a 4K-bit (512 x 8 or 256 x 16) memory organization, making it suitable for applications requiring reliable and reprogrammable storage of configuration settings, calibration data, or small datasets.  

Operating with a wide voltage range (typically 2.5V to 5.5V), the NM93C66N supports both industrial and consumer-grade environments. It utilizes a 3-wire serial interface (compatible with Microwire protocol) for communication with microcontrollers or other digital systems, ensuring efficient data transfer with minimal pin count. The device also includes hardware and software write protection to prevent accidental data corruption.  

Key features include a high endurance rating (typically 1 million write cycles) and a data retention period of up to 100 years, ensuring long-term reliability. Its compact DIP or SOIC package options make it easy to integrate into various circuit designs.  

Common applications include embedded systems, automotive electronics, smart meters, and industrial control modules where secure, low-power, and non-volatile memory is essential. The NM93C66N balances performance, durability, and ease of use, making it a versatile choice for engineers.

Application Scenarios & Design Considerations

Electrically Erasable Programmable Memories

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