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NM27C512VE150 from NS,National Semiconductor

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NM27C512VE150

Manufacturer: NS

524,288-bit (64K x 8) high performance CMOS EPROM, 150ns

Partnumber Manufacturer Quantity Availability
NM27C512VE150 NS 20 In Stock

Description and Introduction

524,288-bit (64K x 8) high performance CMOS EPROM, 150ns # Introduction to the NM27C512VE150  

The NM27C512VE150 is a high-performance EPROM (Erasable Programmable Read-Only Memory) integrated circuit designed for applications requiring non-volatile data storage. With a capacity of 512 kilobits (64K x 8 bits), this component offers reliable and efficient memory storage for embedded systems, industrial controls, and legacy computing applications.  

Featuring a fast access time of 150 ns, the NM27C512VE150 ensures quick data retrieval, making it suitable for systems where speed is critical. It operates on a single 5V power supply, aligning with standard TTL voltage levels for easy integration into existing designs. The device supports multiple programming modes, including standard and fast programming algorithms, enhancing flexibility during firmware updates.  

The NM27C512VE150 is housed in a durable 28-pin DIP (Dual In-line Package) or PLCC (Plastic Leaded Chip Carrier) package, ensuring robustness in various environments. Its UV-erasable capability allows for multiple reprogramming cycles, making it ideal for development and prototyping.  

As a reliable and cost-effective solution, the NM27C512VE150 remains a preferred choice for engineers working with legacy systems or applications requiring stable, long-term data retention. Its compatibility with industry standards ensures seamless integration into a wide range of electronic designs.

Application Scenarios & Design Considerations

524,288-bit (64K x 8) high performance CMOS EPROM, 150ns

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