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NM27C512QE-120 from NS,National Semiconductor

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NM27C512QE-120

Manufacturer: NS

524,288-bit (64K x 8) high performance CMOS EPROM, 120ns

Partnumber Manufacturer Quantity Availability
NM27C512QE-120,NM27C512QE120 NS 8800 In Stock

Description and Introduction

524,288-bit (64K x 8) high performance CMOS EPROM, 120ns # Introduction to the NM27C512QE-120  

The **NM27C512QE-120** is a high-performance **EPROM (Erasable Programmable Read-Only Memory)** integrated circuit designed for applications requiring reliable non-volatile data storage. With a capacity of **512 kilobits (64K x 8 bits)**, this component is well-suited for embedded systems, industrial controls, and legacy computing applications.  

Operating at a **120ns access time**, the NM27C512QE-120 ensures efficient data retrieval, making it ideal for systems where speed and stability are critical. It features a **single 5V power supply**, simplifying integration into various electronic designs. The device supports **standard EPROM programming methods** and can be erased via **ultraviolet (UV) light exposure**, allowing for reprogramming as needed.  

Encased in a **32-pin ceramic or plastic DIP (Dual In-line Package)**, the NM27C512QE-120 offers durability and ease of handling. Its compatibility with industry-standard pinouts ensures straightforward replacement in existing designs.  

Key applications include firmware storage, microcontroller-based systems, and archival data retention where long-term reliability is essential. While newer flash memory technologies have largely replaced EPROMs in modern designs, the NM27C512QE-120 remains a dependable choice for legacy systems and specialized applications requiring UV-erasable memory.  

This component exemplifies the robustness and simplicity of traditional EPROM technology, delivering consistent performance in demanding environments.

Application Scenarios & Design Considerations

524,288-bit (64K x 8) high performance CMOS EPROM, 120ns

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