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NM27C512QE--120 from NS,National Semiconductor

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NM27C512QE--120

Manufacturer: NS

524,288-bit (64K x 8) high performance CMOS EPROM, 120ns

Partnumber Manufacturer Quantity Availability
NM27C512QE--120,NM27C512QE120 NS 169 In Stock

Description and Introduction

524,288-bit (64K x 8) high performance CMOS EPROM, 120ns # Introduction to the NM27C512QE--120  

The NM27C512QE--120 is a high-performance EPROM (Erasable Programmable Read-Only Memory) integrated circuit designed for applications requiring non-volatile data storage. With a capacity of 512 kilobits (64K x 8 bits), this component provides reliable and durable memory storage, making it suitable for embedded systems, industrial controls, and legacy computing applications.  

Featuring a fast access time of 120 nanoseconds, the NM27C512QE--120 ensures efficient data retrieval, supporting high-speed processing requirements. Its UV-erasable design allows for reprogramming, offering flexibility during development and testing phases. The device operates on a single 5V power supply, ensuring compatibility with standard TTL logic levels.  

Encased in a durable ceramic or plastic package, the NM27C512QE--120 is built to withstand demanding environments. Its wide temperature range and robust construction make it a dependable choice for industrial and automotive electronics.  

As a legacy EPROM, the NM27C512QE--120 remains relevant in systems where long-term data retention and reprogrammability are essential. Its straightforward interface and proven reliability continue to make it a preferred solution for engineers working with older or specialized hardware architectures.

Application Scenarios & Design Considerations

524,288-bit (64K x 8) high performance CMOS EPROM, 120ns

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