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NM27C512N-150 from NS,National Semiconductor

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NM27C512N-150

Manufacturer: NS

524,288-bit (64K x 8) high performance CMOS EPROM, 150ns

Partnumber Manufacturer Quantity Availability
NM27C512N-150,NM27C512N150 NS 1261 In Stock

Description and Introduction

524,288-bit (64K x 8) high performance CMOS EPROM, 150ns # Introduction to the NM27C512N-150  

The **NM27C512N-150** is a high-performance **EPROM (Erasable Programmable Read-Only Memory)** integrated circuit designed for applications requiring non-volatile data storage. With a capacity of **512 kilobits (64K x 8 bits)**, this component provides reliable memory retention and is widely used in embedded systems, industrial controls, and legacy computing applications.  

Featuring a fast **150ns access time**, the NM27C512N-150 ensures efficient data retrieval, making it suitable for systems where speed is critical. It operates on a **single 5V power supply**, simplifying integration into various digital circuits. The device supports **standard EPROM programming methods**, allowing data to be written and erased using ultraviolet (UV) light exposure, which clears the memory for reprogramming.  

The NM27C512N-150 is housed in a **28-pin DIP (Dual In-line Package)**, ensuring compatibility with many existing circuit board designs. Its robust architecture and proven reliability make it a preferred choice for applications requiring long-term data storage without frequent updates.  

While newer memory technologies have emerged, the NM27C512N-150 remains relevant in systems where EPROM characteristics—such as UV erasability and high endurance—are essential. Its straightforward interface and dependable performance continue to support legacy and specialized electronic designs.

Application Scenarios & Design Considerations

524,288-bit (64K x 8) high performance CMOS EPROM, 150ns

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