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MBT2222ADW1T1G

General Purpose Transistor

Partnumber Manufacturer Quantity Availability
MBT2222ADW1T1G 43725 In Stock

Description and Introduction

General Purpose Transistor The **MBT2222ADW1T1G** is a **NPN Bipolar Junction Transistor (BJT)** manufactured by **ON Semiconductor**.  

### **Specifications:**  
- **Transistor Type:** NPN  
- **Maximum Collector-Base Voltage (VCB):** 75V  
- **Maximum Collector-Emitter Voltage (VCE):** 40V  
- **Maximum Emitter-Base Voltage (VEB):** 6V  
- **Continuous Collector Current (IC):** 600mA  
- **Total Power Dissipation (PD):** 200mW  
- **DC Current Gain (hFE):** 100 to 300 (at IC = 10mA, VCE = 1V)  
- **Transition Frequency (fT):** 300MHz  
- **Operating Temperature Range:** -55°C to +150°C  
- **Package:** SOT-363 (SC-88)  

### **Descriptions & Features:**  
- Designed for **general-purpose amplification and switching applications**.  
- **High current gain (hFE)** for improved signal amplification.  
- **Low saturation voltage** for efficient switching.  
- **Compact SMD package** for space-constrained PCB designs.  
- **RoHS compliant** and lead-free.  

This transistor is commonly used in **low-power amplification, signal processing, and switching circuits**.

Application Scenarios & Design Considerations

General Purpose Transistor
Partnumber Manufacturer Quantity Availability
MBT2222ADW1T1G ON 200 In Stock

Description and Introduction

General Purpose Transistor The MBT2222ADW1T1G is a dual NPN general-purpose amplifier transistor manufactured by ON Semiconductor.  

### **Specifications:**  
- **Type:** Dual NPN Bipolar Junction Transistor (BJT)  
- **Package:** SOT-363 (SC-88)  
- **Collector-Base Voltage (VCBO):** 75V  
- **Collector-Emitter Voltage (VCEO):** 40V  
- **Emitter-Base Voltage (VEBO):** 6V  
- **Continuous Collector Current (IC):** 600mA per transistor  
- **Total Power Dissipation (PD):** 200mW  
- **DC Current Gain (hFE):** 100 to 300 (at IC = 150mA, VCE = 1V)  
- **Transition Frequency (fT):** 300MHz (typical)  
- **Operating Temperature Range:** -55°C to +150°C  

### **Descriptions & Features:**  
- Designed for general-purpose amplification and switching applications.  
- High current gain and low saturation voltage.  
- Suitable for surface-mount applications due to its small SOT-363 package.  
- Matched pair configuration for improved performance in differential amplifier circuits.  
- RoHS compliant and lead-free.  

For detailed electrical characteristics, refer to ON Semiconductor’s official datasheet.

Application Scenarios & Design Considerations

General Purpose Transistor

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