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MBR20H200CT from 台产

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MBR20H200CT

Manufacturer: 台产

Discrete Devices -Diode-Schottky

Partnumber Manufacturer Quantity Availability
MBR20H200CT 台产 67 In Stock

Description and Introduction

Discrete Devices -Diode-Schottky The MBR20H200CT is a Schottky barrier rectifier manufactured by 台产 (Taiwan). Below are its specifications, descriptions, and features based on factual information:  

### **Specifications:**  
- **Type:** Schottky Barrier Rectifier  
- **Package:** TO-220AB (3-pin)  
- **Configuration:** Dual common cathode  
- **Maximum Average Forward Current (Io):** 20A per diode (10A per leg in common cathode configuration)  
- **Peak Forward Surge Current (Ifsm):** 200A  
- **Maximum Reverse Voltage (Vr):** 200V  
- **Forward Voltage Drop (Vf):** Typically 0.85V at 10A  
- **Reverse Leakage Current (Ir):** 10mA at 200V  
- **Operating Junction Temperature (Tj):** -55°C to +150°C  
- **Storage Temperature Range (Tstg):** -55°C to +150°C  

### **Descriptions:**  
- The MBR20H200CT is a high-efficiency Schottky rectifier designed for power supply and switching applications.  
- It features a dual common cathode configuration, making it suitable for full-wave rectification.  
- The Schottky barrier technology ensures low forward voltage drop and fast switching characteristics.  

### **Features:**  
- **Low Forward Voltage Drop:** Enhances efficiency in high-current applications.  
- **High Surge Current Capability:** Supports transient overload conditions.  
- **Fast Switching Speed:** Reduces switching losses in high-frequency circuits.  
- **High Temperature Operation:** Reliable performance in demanding environments.  
- **Common Cathode Design:** Simplifies circuit layout in full-wave rectifier setups.  

This information is based solely on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

Discrete Devices -Diode-Schottky

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