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MBR10200CTF-G1 from 台半

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MBR10200CTF-G1

Manufacturer: 台半

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Partnumber Manufacturer Quantity Availability
MBR10200CTF-G1,MBR10200CTFG1 台半 200 In Stock

Description and Introduction

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER The MBR10200CTF-G1 is a Schottky Barrier Rectifier manufactured by 台半 (Taiwan Semiconductor). Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Voltage Rating (Vr):** 100V  
- **Current Rating (Io):** 10A (per diode)  
- **Forward Voltage Drop (Vf):** 0.85V (typical) at 5A  
- **Reverse Leakage Current (Ir):** 0.5mA (max) at 100V  
- **Operating Temperature Range:** -65°C to +150°C  
- **Package Type:** TO-220AB (isolated tab)  

### **Descriptions:**
- Dual common cathode Schottky rectifier.  
- Designed for high-efficiency power applications.  
- Low power loss and high thermal performance.  

### **Features:**
- **Low Forward Voltage Drop:** Enhances efficiency.  
- **High Surge Current Capability:** Suitable for demanding applications.  
- **Isolated Package:** Provides electrical isolation for heat sink mounting.  
- **Fast Switching:** Reduces switching losses in high-frequency circuits.  

This rectifier is commonly used in power supplies, DC-DC converters, and reverse polarity protection circuits.  

(Data sourced from 台半's official documentation.)

Application Scenarios & Design Considerations

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER
Partnumber Manufacturer Quantity Availability
MBR10200CTF-G1,MBR10200CTFG1 BCD 320 In Stock

Description and Introduction

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER The **MBR10200CTF-G1** is a Schottky Barrier Rectifier manufactured by **BCD Semiconductor**. Below are the specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:

### **Specifications:**  
- **Manufacturer:** BCD Semiconductor  
- **Type:** Schottky Barrier Rectifier  
- **Package:** TO-220F (Fully Molded)  
- **Configuration:** Dual Common Cathode  
- **Maximum Average Forward Current (Io):** 10A per diode (20A total)  
- **Peak Forward Surge Current (Ifsm):** 150A  
- **Maximum Reverse Voltage (Vr):** 200V  
- **Forward Voltage Drop (Vf):** 0.85V (typical) at 10A  
- **Reverse Leakage Current (Ir):** 0.5mA (typical) at 200V  
- **Operating Junction Temperature (Tj):** -55°C to +150°C  
- **Storage Temperature Range:** -55°C to +150°C  

### **Descriptions:**  
- The **MBR10200CTF-G1** is a high-efficiency Schottky rectifier designed for applications requiring low forward voltage drop and high current capability.  
- It features a dual common cathode configuration in a TO-220F package, making it suitable for power supply and DC-DC converter applications.  
- The device is optimized for high-frequency switching due to its fast switching characteristics and minimal reverse recovery time.  

### **Features:**  
- **Low Forward Voltage Drop:** Enhances efficiency in power conversion.  
- **High Current Capability:** Supports up to 10A per diode (20A total).  
- **High Surge Current Capacity:** Withstands up to 150A peak surge.  
- **Fully Molded Package:** Provides improved thermal performance and mechanical durability.  
- **Pb-Free and RoHS Compliant:** Environmentally friendly design.  
- **Fast Switching:** Reduces switching losses in high-frequency applications.  

This information is strictly based on the manufacturer's datasheet and technical documentation.

Application Scenarios & Design Considerations

HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

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