8M (1M X 8/512K X 16) BIT The MBM29F800BA-90PFTN is a flash memory chip manufactured by Fujitsu. Below are its specifications, descriptions, and features based on available factual information:
### **Specifications:**
- **Manufacturer:** Fujitsu
- **Model:** MBM29F800BA-90PFTN
- **Type:** Flash Memory (NOR Flash)
- **Density:** 8 Mbit (1 MB)
- **Organization:**
- 512K x 16-bit
- 1M x 8-bit
- **Access Time:** 90 ns
- **Supply Voltage:** 5V ± 10%
- **Operating Current:**
- Read: 20 mA (typical)
- Program/Erase: 30 mA (typical)
- **Standby Current:** 1 µA (typical)
- **Package:** 44-pin Plastic TSOP (Thin Small Outline Package)
- **Operating Temperature Range:**
- Commercial: 0°C to +70°C
- Industrial: -40°C to +85°C
### **Descriptions:**
- The MBM29F800BA-90PFTN is a 5V-only, high-performance flash memory device.
- It supports both **byte (x8) and word (x16)** configurations.
- Features **sector erase architecture** (uniform or boot block sectors).
- Compatible with **JEDEC standard** pinouts.
- Designed for **high-speed read operations** with low power consumption.
### **Features:**
- **Fast Access Time:** 90 ns
- **Low Power Consumption:**
- Active read current: 20 mA (typical)
- Standby current: 1 µA (typical)
- **Flexible Sector Architecture:**
- Supports **uniform sectoring** (64K x 16) or **boot block** configurations.
- **Reliable Erase/Program Operations:**
- **Sector erase** (4K, 8K, 16K, 32K, or 64K bytes)
- **Chip erase** function
- **Hardware Data Protection:**
- **VPP pin for write protection**
- **Reset pin for temporary read-only mode**
- **Automatic Program/Erase Algorithms:**
- Embedded **erase verify** and **program verify** functions
- **High-Endurance:**
- Minimum **100,000 erase/program cycles** per sector
- **Data Retention:** 10 years minimum
This information is based on Fujitsu's official documentation for the MBM29F800BA-90PFTN flash memory chip.
