FLASH MEMORY 8M (1M x 8/512K x 16) BIT The **MBM29F800BA-70** is a flash memory chip manufactured by **FUJITSU**. Below are its specifications, descriptions, and features based on factual information from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** FUJITSU
- **Part Number:** MBM29F800BA-70
- **Memory Type:** Flash (EEPROM)
- **Density:** 8 Mbit (1M x 8-bit / 512K x 16-bit)
- **Supply Voltage:** 5V ± 10%
- **Access Time:** 70 ns
- **Organization:**
- **Byte Mode:** 1,048,576 words × 8 bits
- **Word Mode:** 524,288 words × 16 bits
- **Operating Temperature Range:** Commercial (0°C to +70°C)
- **Package Type:** 48-pin TSOP (Thin Small Outline Package)
- **Interface:** Parallel
### **Descriptions:**
- The MBM29F800BA-70 is a **5V-only** flash memory device designed for high-performance applications.
- It supports both **byte-wide (x8)** and **word-wide (x16)** configurations, providing flexibility in system design.
- The device features a **70 ns access time**, making it suitable for fast read operations.
- It includes **sector erase architecture**, allowing individual sectors to be erased without affecting others.
### **Features:**
- **Single 5V Power Supply** for read, program, and erase operations.
- **Sector Erase Capability:**
- Uniform 16 KB sectors (47 sectors)
- One 8 KB sector
- Two 32 KB sectors
- **Fast Program & Erase Times:**
- Byte/Word Program: 10 µs (typical)
- Sector Erase: 1 second (typical)
- Chip Erase: 10 seconds (typical)
- **Hardware & Software Data Protection** to prevent accidental writes.
- **Low Power Consumption:**
- Active Read Current: 25 mA (typical)
- Standby Current: 1 µA (typical)
- **Compatible with JEDEC Standards** for easy integration.
- **Automatic Program & Erase Algorithms** for simplified operation.
This information is strictly based on the manufacturer's datasheet and technical documentation.
