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MBM29F800BA-55PF from FUJ

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MBM29F800BA-55PF

Manufacturer: FUJ

8M (1M X 8/512K X 16) BIT

Partnumber Manufacturer Quantity Availability
MBM29F800BA-55PF,MBM29F800BA55PF FUJ 5530 In Stock

Description and Introduction

8M (1M X 8/512K X 16) BIT The **MBM29F800BA-55PF** is a flash memory device manufactured by **Fujitsu (FUJ)**. Below are its specifications, descriptions, and features based on Ic-phoenix technical data files:  

### **Specifications:**  
- **Memory Type:** Flash  
- **Memory Format:** EEPROM  
- **Memory Size:** 8 Mbit (1 MB)  
- **Organization:**  
  - **x8 Mode:** 1M x 8  
  - **x16 Mode:** 512K x 16  
- **Speed:** 55 ns (access time)  
- **Supply Voltage:** 5V ± 10%  
- **Operating Temperature Range:** Commercial (0°C to +70°C)  
- **Package:** 44-Pin Plastic TSOP (PF)  

### **Descriptions:**  
- The **MBM29F800BA-55PF** is a **5V-only** flash memory device with a flexible **byte/word-wide** data bus.  
- It supports **asynchronous read and write operations** with a fast access time of **55 ns**.  
- The device is designed for **high-performance applications** requiring non-volatile storage.  

### **Features:**  
- **Single 5V Power Supply** (no additional voltage required for programming/erasing).  
- **Sector Erase Architecture:**  
  - **Eight 16K-byte** sectors  
  - **One 8K-byte** sector  
  - **One 32K-byte** sector  
  - **Fifteen 64K-byte** sectors  
- **Low Power Consumption:**  
  - **Active Read Current:** 30 mA (typical)  
  - **Standby Current:** 100 µA (typical)  
- **Hardware Data Protection:**  
  - **VCC detection** for write protection  
  - **Write inhibit** on power-up  
- **Embedded Algorithms:**  
  - **Chip Erase, Sector Erase, Byte/Word Program**  
- **Compatibility:**  
  - **JEDEC-standard** pinout and command set  
  - **Industry-standard** flash memory interface  

This information is strictly based on the provided knowledge base without additional interpretation.

Application Scenarios & Design Considerations

8M (1M X 8/512K X 16) BIT

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