CMOS 8M (1M x 8) bit The **MBM29F080A-70PFTN** is a flash memory chip manufactured by **Fujitsu (FUJ)**. Below are its specifications, descriptions, and features based on factual data:
### **Specifications:**
- **Manufacturer:** Fujitsu (FUJ)
- **Part Number:** MBM29F080A-70PFTN
- **Memory Type:** Flash
- **Memory Capacity:** 8 Mbit (1 MB)
- **Organization:** 1M x 8-bit
- **Supply Voltage:** 5V ± 10%
- **Access Time:** 70 ns
- **Package Type:** 44-Pin TSOP (Thin Small Outline Package)
- **Operating Temperature Range:** Commercial (0°C to +70°C)
- **Interface:** Parallel
### **Descriptions:**
- The **MBM29F080A-70PFTN** is a **5V-only** flash memory device designed for high-performance applications.
- It supports **byte-wide** data access with a **70 ns access time**, making it suitable for embedded systems and firmware storage.
- The chip features **asynchronous operation** and is compatible with standard microprocessor interfaces.
### **Features:**
- **Single 5V Power Supply** (no additional voltage required for programming/erasing).
- **Sector Erase Architecture**:
- Eight 16 KB sectors.
- One 8 KB sector.
- One 32 KB sector.
- One 64 KB sector.
- **Fast Erase & Program Times**:
- Sector erase time: **1 second (typical)**.
- Byte programming time: **10 µs (typical)**.
- **Hardware Data Protection**:
- Built-in **write protection** during power transitions.
- **VCC detection** to prevent accidental writes.
- **Reliable Endurance**:
- **Minimum 100,000 erase/program cycles** per sector.
- **Data retention of 20 years**.
- **Command Register Architecture**:
- Uses **JEDEC-standard commands** for read, program, and erase operations.
- **Low Power Consumption**:
- Active read current: **30 mA (typical)**.
- Standby current: **100 µA (typical)**.
This information is strictly based on the manufacturer's datasheet and technical documentation.
