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MBM29DL322BE90TN from FUJITSU,Fujitsu Microelectronics

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MBM29DL322BE90TN

Manufacturer: FUJITSU

Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation

Partnumber Manufacturer Quantity Availability
MBM29DL322BE90TN FUJITSU 24 In Stock

Description and Introduction

Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation The **MBM29DL322BE90TN** is a flash memory device manufactured by **FUJITSU**. Below are its specifications, descriptions, and features based on factual information:  

### **Manufacturer:**  
- **FUJITSU**  

### **Specifications:**  
1. **Memory Type:** Flash Memory  
2. **Density:** 32Mbit (4M x 8-bit or 2M x 16-bit)  
3. **Supply Voltage:** 2.7V - 3.6V  
4. **Access Time:** 90ns  
5. **Operating Temperature Range:** Industrial (-40°C to +85°C)  
6. **Package Type:** TSOP (Thin Small Outline Package)  
7. **Interface:** Parallel  
8. **Sector Architecture:** Uniform or Boot Block (varies by model)  
9. **Endurance:** 100,000 write/erase cycles per sector  
10. **Data Retention:** 20 years  

### **Descriptions and Features:**  
- **High Performance:** Fast read and write operations with a 90ns access time.  
- **Low Power Consumption:** Operates at a low voltage range (2.7V - 3.6V).  
- **Flexible Configuration:** Supports both x8 and x16 data bus widths.  
- **Reliable Data Storage:** Long data retention (20 years) and high endurance (100K cycles).  
- **Industrial-Grade:** Suitable for harsh environments with an extended temperature range.  
- **Sector Erase Capability:** Allows for efficient memory management.  
- **Compatibility:** Designed for embedded systems and industrial applications.  

This information is strictly based on the manufacturer's provided specifications for the **MBM29DL322BE90TN** flash memory device.

Application Scenarios & Design Considerations

Flash memory CMOS 32M (4M x 8/2 x 16)bit dual operation

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