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MBM29DL161TD-90PBT from FUJITSU,Fujitsu Microelectronics

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MBM29DL161TD-90PBT

Manufacturer: FUJITSU

Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation

Partnumber Manufacturer Quantity Availability
MBM29DL161TD-90PBT,MBM29DL161TD90PBT FUJITSU 166 In Stock

Description and Introduction

Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation The **MBM29DL161TD-90PBT** is a flash memory device manufactured by **Fujitsu**. Below are its key specifications, descriptions, and features:

### **Specifications:**
- **Memory Type:** Flash  
- **Memory Format:** NOR  
- **Density:** 16 Mbit (2M x 8-bit / 1M x 16-bit)  
- **Supply Voltage:** 2.7V - 3.6V  
- **Access Time:** 90 ns  
- **Operating Temperature Range:** -40°C to +85°C  
- **Package:** 48-pin TSOP (Thin Small Outline Package)  
- **Interface:** Parallel  

### **Descriptions:**
- **Organization:** Configurable as either **x8 or x16** data bus width.  
- **Sector Architecture:** Uniform **4KB** sectors for flexible erase operations.  
- **Erase/Program:** Supports **sector erase, block erase, and chip erase** operations.  
- **Command Set:** Compatible with **JEDEC standard** flash commands.  

### **Features:**
- **Low Power Consumption:**  
  - **Active Read Current:** 15 mA (typical)  
  - **Standby Current:** 1 µA (typical)  
- **High Reliability:**  
  - **Endurance:** 100,000 program/erase cycles per sector  
  - **Data Retention:** 20 years (minimum)  
- **Hardware Write Protection:** Supports **WP# (Write Protect)** pin for sector protection.  
- **Software Data Protection:** Prevents accidental writes.  
- **Embedded Algorithms:** Includes **erase suspend/resume** and **program suspend/resume** functions.  

This device is designed for applications requiring **non-volatile storage** with fast read/write operations, such as embedded systems, networking equipment, and industrial devices.

Application Scenarios & Design Considerations

Flash memory CMOS 16M (2M x 8/1M x16) bit dual operation

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