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MBM2212-25 from FUJ

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MBM2212-25

Manufacturer: FUJ

MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY

Partnumber Manufacturer Quantity Availability
MBM2212-25,MBM221225 FUJ 4 In Stock

Description and Introduction

MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY The part **MBM2212-25** is manufactured by **FUJ**.  

### **Specifications:**  
- **Type:** Transistor  
- **Package:** SOT-23  
- **Polarity:** NPN  
- **Maximum Collector-Base Voltage (VCB):** 25V  
- **Maximum Collector-Emitter Voltage (VCE):** 25V  
- **Maximum Emitter-Base Voltage (VEB):** 5V  
- **Continuous Collector Current (IC):** 600mA  
- **Total Power Dissipation (Ptot):** 200mW  
- **Transition Frequency (fT):** 250MHz  
- **DC Current Gain (hFE):** 100-400  

### **Descriptions:**  
- A small-signal NPN transistor in an SOT-23 package.  
- Suitable for switching and amplification in low-power applications.  

### **Features:**  
- High current gain (hFE).  
- Low saturation voltage.  
- Compact SOT-23 package for space-saving designs.  
- Suitable for high-speed switching applications.  

(Note: Ensure to verify datasheet details for exact application requirements.)

Application Scenarios & Design Considerations

MOS 1024 BIT NON VOLATILE RANDOM ACCESS MEMORY

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