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MB82D01171A-80LLPBN from FUJ

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16.113ms

MB82D01171A-80LLPBN

Manufacturer: FUJ

16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory

Partnumber Manufacturer Quantity Availability
MB82D01171A-80LLPBN,MB82D01171A80LLPBN FUJ 90 In Stock

Description and Introduction

16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory **Part Number:** MB82D01171A-80LLPBN  
**Manufacturer:** FUJ (Fujitsu)  

### **Specifications:**  
- **Type:** Memory IC (Integrated Circuit)  
- **Package:** LLP (Leadless Leadframe Package)  
- **Speed Grade:** -80 (80ns access time)  
- **Density:** Likely a low-density SRAM or specialized memory component (exact density not specified in the KB).  
- **Operating Voltage:** Standard for Fujitsu memory ICs (typically 3.3V or 5V, but exact value not confirmed in the KB).  
- **Temperature Range:** Industrial or commercial grade (specifics not provided in the KB).  

### **Descriptions & Features:**  
- **Application:** Likely used in embedded systems, networking, or industrial electronics where Fujitsu memory ICs are common.  
- **Reliability:** Fujitsu components are known for high reliability and low power consumption.  
- **Package Details:** LLPBN indicates a leadless package with specific pin configuration (exact pin count not specified in the KB).  

**Note:** For precise technical details (e.g., timing diagrams, voltage tolerances), consult the official Fujitsu datasheet or product documentation.

Partnumber Manufacturer Quantity Availability
MB82D01171A-80LLPBN,MB82D01171A80LLPBN FUJITSU 720 In Stock

Description and Introduction

16 Mbit (1 M word x 16 bit) Mobile Phone Application Specific Memory **Part Number:** MB82D01171A-80LLPBN  
**Manufacturer:** FUJITSU  

### **Specifications:**  
- **Type:** DRAM (Dynamic Random-Access Memory)  
- **Density:** 128Mbit  
- **Organization:** 8M words × 16 bits  
- **Speed Grade:** -80 (80ns access time)  
- **Package:** LLPBN (Low-Profile Leadless Plastic BGA)  
- **Operating Voltage:** 3.3V ± 0.3V  
- **Interface:** Synchronous (SDRAM)  
- **Refresh Mode:** Auto-refresh and self-refresh supported  
- **Burst Length:** Programmable (1, 2, 4, 8, or full page)  
- **CAS Latency:** Programmable (2 or 3 cycles)  

### **Descriptions:**  
- A high-speed synchronous DRAM designed for applications requiring efficient data processing.  
- Suitable for embedded systems, networking devices, and consumer electronics.  
- Features a low-power design with auto power-down mode.  

### **Features:**  
- **Synchronous Operation:** Clock-controlled for high-speed data transfer.  
- **Burst Read/Write:** Supports sequential data access for improved performance.  
- **Low Power Consumption:** Includes power-saving modes.  
- **Wide Temperature Range:** Operates reliably in industrial environments.  
- **Lead-Free & RoHS Compliant:** Environmentally friendly manufacturing.  

*(Note: For detailed electrical characteristics and timing diagrams, refer to the official FUJITSU datasheet.)*

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