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MB8264A-10 from FUJI

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MB8264A-10

Manufacturer: FUJI

MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY

Partnumber Manufacturer Quantity Availability
MB8264A-10,MB8264A10 FUJI 663 In Stock

Description and Introduction

MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY The part **MB8264A-10** is manufactured by **FUJI**.  

### **Specifications:**  
- **Type:** IC (Integrated Circuit)  
- **Category:** Memory (RAM)  
- **Technology:** CMOS  
- **Memory Size:** 64Kbit (8K x 8)  
- **Operating Voltage:** 5V  
- **Access Time:** 100ns  
- **Package:** DIP (Dual In-line Package)  

### **Descriptions:**  
The **MB8264A-10** is a **64Kbit (8K x 8) static RAM** designed for high-speed applications. It operates at **5V** and features **CMOS technology** for low power consumption.  

### **Features:**  
- **64Kbit (8K x 8) organization**  
- **Fast access time (100ns)**  
- **Low power consumption (CMOS technology)**  
- **Single 5V power supply**  
- **Standard DIP package**  
- **Wide operating temperature range**  

This information is based on available technical documentation for the **MB8264A-10** by **FUJI**.

Partnumber Manufacturer Quantity Availability
MB8264A-10,MB8264A10 267 In Stock

Description and Introduction

MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY The part **MB8264A-10** is a **64K (8K x 8) Static RAM (SRAM)** manufactured by **Fujitsu**.  

### **Specifications:**  
- **Organization:** 8K x 8 (65,536 bits)  
- **Access Time:** 100 ns  
- **Operating Voltage:** 5V ±10%  
- **Power Consumption:**  
  - Active: 330 mW (typical)  
  - Standby: 33 mW (typical)  
- **Operating Temperature Range:** 0°C to +70°C  
- **Package Type:** 28-pin DIP (Dual In-line Package)  
- **Technology:** CMOS  

### **Descriptions & Features:**  
- **High-Speed Operation:** Suitable for systems requiring fast memory access.  
- **Low Power Consumption:** Features both active and standby modes for power efficiency.  
- **Fully Static Design:** No clock or refresh required.  
- **TTL-Compatible Inputs/Outputs:** Ensures compatibility with standard logic levels.  
- **Single 5V Power Supply:** Simplifies system integration.  
- **Three-State Outputs:** Allows bus-oriented applications.  
- **Wide Temperature Range:** Suitable for commercial-grade applications.  

This SRAM was commonly used in early computing systems, embedded applications, and industrial electronics where fast, low-power memory was required.

Partnumber Manufacturer Quantity Availability
MB8264A-10,MB8264A10 FUJ 124 In Stock

Description and Introduction

MOS 65536-BIT DYNAMIC RANDOM ACCESS MEMORY **Manufacturer:** FUJ  

**Part Number:** MB8264A-10  

**Specifications:**  
- **Type:** Static RAM (SRAM)  
- **Capacity:** 64Kb (8K x 8 bits)  
- **Access Time:** 100 ns  
- **Operating Voltage:** 5V  
- **Package:** 28-pin DIP (Dual In-line Package)  
- **Operating Temperature Range:** 0°C to 70°C  

**Descriptions and Features:**  
- High-speed CMOS SRAM  
- Fully static operation (no refresh required)  
- Low power consumption  
- TTL-compatible inputs and outputs  
- Single 5V power supply  
- Common I/O structure  
- Three-state outputs for bus-oriented applications  

This part is commonly used in older computer systems and embedded applications requiring fast, low-power SRAM.

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