32 Mbit 4Mb x8 or 2Mb x16, Dual Bank 8:24, Boot Block 3V Supply Flash Memory The M29DW323DT70N6E is a flash memory device manufactured by STMicroelectronics (ST). Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Manufacturer:**
STMicroelectronics (ST)
### **Specifications:**
- **Memory Type:** NOR Flash
- **Density:** 32 Mbit (4M x 8-bit or 2M x 16-bit)
- **Supply Voltage:**
- **VCC (Core):** 2.7V to 3.6V
- **VCCQ (I/O):** 1.65V to 3.6V
- **Access Time:** 70 ns
- **Operating Temperature Range:** -40°C to +85°C
- **Package:** TSOP48 (Thin Small Outline Package, 48 pins)
- **Interface:** Parallel (x8/x16)
- **Sector Architecture:**
- **Uniform Sector Size:** 64 KB (for main array)
- **Additional Small Sectors:** 8 x 8 KB, 1 x 32 KB (for parameter blocks)
- **Endurance:** 100,000 write/erase cycles per sector
- **Data Retention:** 20 years
### **Descriptions:**
The M29DW323DT70N6E is a 32 Mbit (4 MB) NOR Flash memory device with a flexible x8/x16 data bus. It supports both uniform and non-uniform sector architectures, making it suitable for embedded applications requiring reliable code and data storage. It features a wide voltage range for core and I/O operations, ensuring compatibility with various system designs.
### **Features:**
- **Dual Voltage Operation:**
- **Core (VCC):** 2.7V–3.6V
- **I/O (VCCQ):** 1.65V–3.6V
- **Flexible Sector Architecture:**
- 63 x 64 KB sectors (main array)
- 8 x 8 KB + 1 x 32 KB sectors (parameter blocks)
- **Advanced Sector Protection:**
- Hardware and software-controlled locking
- Temporary sector unprotect feature
- **Low Power Consumption:**
- Standby current: 5 µA (typical)
- Active read current: 15 mA (typical)
- **High Performance:**
- Fast read access time (70 ns)
- Page mode read (4-word/8-byte) for faster throughput
- **Reliability:**
- 100K erase/write cycles
- 20-year data retention
- **Compliance:**
- RoHS compliant
This information is based solely on the manufacturer's datasheet and technical documentation.
